New ν(E) relationship for GaAs

A new ν(E) relationship of GaAs has been developed, in which the nonequilibrium transport effects (or velocity overshoot effects) of electrons were included. It was observed that the peak electric field E_p, corresponding to the average peak electron velocity ν_p, and the saturation electron velocity ν_s increase with shortening of the length of GaAs devices, and that E_p decreases slightly with the decrease of the lattice temperature T_o.