Title :
Influence of source-drain series resistance on MOSFET field-effect mobility
Author :
Cabon-Till, B. ; Ghibaudo, Gerard ; Cristoloveanu, S.
Author_Institution :
ENSERG, Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, Grenoble, France
Abstract :
A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances.
Keywords :
carrier mobility; electric resistance; insulated gate field effect transistors; semiconductor device models; MOSFET; channel lengths; field-effect mobility; gate voltage; model; short-channel devices; source-drain series resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850324
