Title :
20 GHz bandwidth InGaAs photodetector for long-wavelength microwave optical links
Author :
Schlafer, J. ; Su, C.B. ; Powazinik, W. ; Lauer, R.B.
Author_Institution :
GTE Laboratories Inc., Waltham, USA
Abstract :
InGaAs photodetectors have been fabricated having a packaged RC plus transit-time-limited bandwidth of 20 GHz and a fibre-coupled responsivity of 0.55 A/W. Using a directly modulated InGaAsP diode laser, the photodetector optical frequency response was measured 3 dB flat to 17 GHz, the bandwidth limit of the laser.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical communication equipment; photodetectors; photodiodes; 20 GHz bandwidth; III-V semiconductors; InGaAr/InP mesa structure; InGaAs photodetector; directly modulated InGaAsP diode laser; long-wavelength microwave optical links; microwave signal processing; optical communication equipment; optical frequency response; packaged RC; photodiodes; transit-time-limited bandwidth;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850333
