Title :
Strong influence of nonlinear gain on spectral and dynamic characteristics of InGaAsP lasers
Author :
Manning, J. ; Olshansky, R. ; Fye, D.M. ; Powazinik, W.
Author_Institution :
GTE Laboratories Incorporated, Waltham, USA
Abstract :
Measurements of the longitudinal-mode spectra of 1.3 ¿m InGaAsP buried-heterostructure lasers are used to determine the form and magnitude of the nonlinear gain. It is shown that nonlinear gain is responsible for the anomalous longitudinal-mode spectra which appear to be universally observed in InGaAsP lasers, and also for the anomalously strong damping of the relaxation oscillations observed in pulse-modulated lasers.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor device models; semiconductor junction lasers; III-V semiconductors; InGaAsP buried-heterostructure lasers; InGaAsP lasers; anomalous longitudinal-mode spectra; anomalously strong damping; dynamic characteristics; influence of nonlinear gain; longitudinal-mode spectra; pulse-modulated lasers; relaxation oscillations; wavelength 1.3 micron;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850351
