• DocumentCode
    1009363
  • Title

    Strong influence of nonlinear gain on spectral and dynamic characteristics of InGaAsP lasers

  • Author

    Manning, J. ; Olshansky, R. ; Fye, D.M. ; Powazinik, W.

  • Author_Institution
    GTE Laboratories Incorporated, Waltham, USA
  • Volume
    21
  • Issue
    11
  • fYear
    1985
  • Firstpage
    496
  • Lastpage
    497
  • Abstract
    Measurements of the longitudinal-mode spectra of 1.3 ¿m InGaAsP buried-heterostructure lasers are used to determine the form and magnitude of the nonlinear gain. It is shown that nonlinear gain is responsible for the anomalous longitudinal-mode spectra which appear to be universally observed in InGaAsP lasers, and also for the anomalously strong damping of the relaxation oscillations observed in pulse-modulated lasers.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor device models; semiconductor junction lasers; III-V semiconductors; InGaAsP buried-heterostructure lasers; InGaAsP lasers; anomalous longitudinal-mode spectra; anomalously strong damping; dynamic characteristics; influence of nonlinear gain; longitudinal-mode spectra; pulse-modulated lasers; relaxation oscillations; wavelength 1.3 micron;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850351
  • Filename
    4251267
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009363