Integration of CMOS-electronics and particle detector diodes in high-resistivity silicon-on-insulator wafers

Author

Dierickx, B. ; Wouters, D. ; Willems, Geert ; Alaerts, A. ; Debusschere, I. ; Simoen, Eddy ; Vlummens, J. ; Akimoto, Hajime ; Claeys, Cor ; Maes, Hannes ; Hermans, L. ; Heijne, Erik H. M. ; Jarron, P. ; Anghinolfi, F. ; Campbell, Malachy ; Pengg, F.X. ; A

Author_Institution

IMEC, Leuven, Belgium

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

753

Lastpage

758

Abstract

A new approach to monolithic pixel detectors, based on silicon on insulator (SOI) wafers with high resistivity substrate, is being pursued by the CERN RD19 collaboration. The fabrication methods and the results of the electrical evaluation of the SOI-MOSFET devices and of the detector structures fabricated in the bulk are reported. The leakage current of the high-resistivity PIN-diodes is kept of the order of 5 to 10 nA/cm². The SOI preparation processes employed-SIMOX (separation by implantation of oxygen) and ZMR (zone melting recrystallization)-produce working electronic circuits, and appear to be compatible with the fabrication of detectors of suitable quality

Keywords

insulated gate field effect transistors; leakage currents; nuclear electronics; p-i-n diodes; semiconductor counters; CMOS-electronics; MOSFET; SIMOX; Si; Si-on-insulator wafers; fabrication methods; high resistivity substrate; high-resistivity PIN-diodes; leakage current; monolithic pixel detectors; particle detector diodes; CMOS process; Collaboration; Conductivity; Diodes; Fabrication; Leak detection; Leakage current; MOSFET circuits; Radiation detectors; Temperature;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256656

Filename

256656