DocumentCode
1009395
Title
Study of preparation techniques for a practical microbridge dc-SQUID structure fabricated from Nb3 Ge
Author
Rogalla, H. ; David, B. ; Mück, M. ; Kato, Y.
Author_Institution
Universität Giessen, Giessen, FRG
Volume
21
Issue
2
fYear
1985
fDate
3/1/1985 12:00:00 AM
Firstpage
536
Lastpage
538
Abstract
Tests with a small area Nb3 Ge dc-SQUID structure revealed promising results: a wide operating temperature range extending up to 20.2 K was achieved with a best modulation depth of 15%. Here we describe development steps towards a more practical device: enlargement of the flux sensitive area and integration of a Nb3 Ge coupling coil For this purpose a Nb3 Ge multilayer technique was developed using SiO2 insulating layers. To optimize the behavior of the very small microbridges the influence of reactive ion etching parameters on the decrease of Tc during the preparation was studied.
Keywords
Bridge circuits; Josephson devices; Bridge circuits; Cathodes; Critical current; Etching; Germanium; Niobium compounds; Nonhomogeneous media; Superconducting coils; Temperature distribution; Voltage;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1063743
Filename
1063743
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