Improvements in dynamic and 1/f noise performances of GaAs MESFETs at cryogenic temperatures by using a monolithic process

Author

Camin, D.V. ; Pessina, G. ; Previtali, E.

Author_Institution

Dipartimento di Fisica, Milano Univ., Italy

Volume

40

Issue

4

fYear

1993

fDate

8/1/1993 12:00:00 AM

Firstpage

759

Lastpage

763

Abstract

A monolithic array of MESFETs with progressively increasing gate lengths from 1 μm to 10 μm and two charge preamplifiers has been designed and integrated in the same chip. Low-frequency noise and dynamic characteristics of the FETs are measured. Results show that D-FETs of the QED/A process by TriQuint present good dynamic performances and low noise at cryogenic temperatures when the gate length has an optimum value. The preamplifier shows very low power dissipation, fast response, and reasonable noise performance in spite of the use of M-FETs which do not exhibit the best noise performance for the process

Keywords

III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; semiconductor device noise; 1 to 10 micron; 1/f noise; D-FETs; GaAs; GaAs MESFET; charge preamplifiers; cryogenic temperatures; dynamic characteristics; gate lengths; low frequency noise; monolithic array; power dissipation; response; Circuits; Cryogenics; FETs; Gallium arsenide; Geometry; Low-frequency noise; MESFETs; Preamplifiers; Temperature; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.256657

Filename

256657