DocumentCode :
1009408
Title :
Recent developments in power transistors
Author :
Mooers, H.T.
Author_Institution :
Minneapolis-Honeywell Research Center, Hopkins, Minnesota
Volume :
2
Issue :
1
fYear :
1955
Firstpage :
63
Lastpage :
73
Abstract :
Power transistors capable of providing five watts output are now in production. Because these units are relatively non-linear in their characteristics, large signal graphical analysis of their behavior is necessary. To facilitate this, the static characteristics of the grounded base, grounded emitter, and grounded collector circuits are presented for several temperatures. Since power transistors are seldom driven with a high impedance source, the input voltages must be known as well as the input currents. These characteristics are drawn to indicate both simultaneously on one chart. The power that must be removed from the junction of these transistors requires that the mounting for the transistor be thermally adequate to remove the heat without allowing the temperature of the Junction to exceed its critical value. The temperature power relationship is discussed and the theoretical size requirements for a heat dissipator are shown for free air convection and forced convection.
Keywords :
Circuits; Ducts; Germanium alloys; Impedance; Independent component analysis; Ocean temperature; P-n junctions; Power transistors; Production; Signal analysis; Tellurium; Temperature; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1955.14061
Filename :
1471921
Link To Document :
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