• DocumentCode
    1009577
  • Title

    1.5 μm phase-shifted DFB laser by EBX and mass-transport technique

  • Author

    Koentjoro, S. ; Eda, N. ; Furuya, Keiichi ; Suematsu, Yasuharu

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    21
  • Issue
    12
  • fYear
    1985
  • Firstpage
    525
  • Lastpage
    527
  • Abstract
    The phase-shifted DFB laser is fabricated by the electron-beam lithography and mass-transport technique. The reduction of threshold current and facet reflectivity was achieved by a one-step mass-transport process. Low threshold and stable single-mode operation was obtained. The effect of the phase shift was confirmed from the symmetrical subthreshold spectra.
  • Keywords
    III-V semiconductors; distributed feedback lasers; electron beam lithography; gallium arsenide; laser modes; semiconductor junction lasers; GaInAsP/InP; III-V semiconductors; device fabrication; electron-beam lithography; low-threshold operation; mass-transport technique; phase-shifted DFB laser; semiconductor lasers; stable single-mode operation; symmetrical subthreshold spectra;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850371
  • Filename
    4251293
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009577