Title :
1.5 μm phase-shifted DFB laser by EBX and mass-transport technique
Author :
Koentjoro, S. ; Eda, N. ; Furuya, Keiichi ; Suematsu, Yasuharu
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
The phase-shifted DFB laser is fabricated by the electron-beam lithography and mass-transport technique. The reduction of threshold current and facet reflectivity was achieved by a one-step mass-transport process. Low threshold and stable single-mode operation was obtained. The effect of the phase shift was confirmed from the symmetrical subthreshold spectra.
Keywords :
III-V semiconductors; distributed feedback lasers; electron beam lithography; gallium arsenide; laser modes; semiconductor junction lasers; GaInAsP/InP; III-V semiconductors; device fabrication; electron-beam lithography; low-threshold operation; mass-transport technique; phase-shifted DFB laser; semiconductor lasers; stable single-mode operation; symmetrical subthreshold spectra;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850371
