• DocumentCode
    1009820
  • Title

    Optically induced latch-up and other effects in CMOS UVEPROMs

  • Author

    Hinds, D.J. ; Stokoe, J.C.D.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    21
  • Issue
    13
  • fYear
    1985
  • Firstpage
    553
  • Lastpage
    554
  • Abstract
    Photographic flash-gun equipment used close to uncovered CMOS UVEPROMs can induce a variety of different failure modes including: (a) destructive latch-up, (b) transients in the output logic levels and in the supply current and (c) a nonde structive `output latching¿ effect. The mode of failure observed depends on the level of illumination used and on the logic state of the output pins.
  • Keywords
    CMOS integrated circuits; PROM; circuit reliability; failure analysis; integrated memory circuits; transients; CMOS UVEPROMs; EPROM; UV erasable PROM; destructive latch-up; failure modes; optically-induced latch-up; output logic levels; supply current; transients;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850390
  • Filename
    4251318
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009820