Title :
Optically induced latch-up and other effects in CMOS UVEPROMs
Author :
Hinds, D.J. ; Stokoe, J.C.D.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Photographic flash-gun equipment used close to uncovered CMOS UVEPROMs can induce a variety of different failure modes including: (a) destructive latch-up, (b) transients in the output logic levels and in the supply current and (c) a nonde structive `output latching¿ effect. The mode of failure observed depends on the level of illumination used and on the logic state of the output pins.
Keywords :
CMOS integrated circuits; PROM; circuit reliability; failure analysis; integrated memory circuits; transients; CMOS UVEPROMs; EPROM; UV erasable PROM; destructive latch-up; failure modes; optically-induced latch-up; output logic levels; supply current; transients;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850390
