Title :
Selective etching characteristics of HF for AlxGa1-xAs/GaAs
Author :
Wu, X.S. ; Coldren, L.A. ; Merz, J.L.
Author_Institution :
Academy of Sciences of China Shanghai Institute of Metallurgy, Shanghai, China
Abstract :
The first detailed report of the selective etching characteristics of an AlxGa1-xAs/GaAs DH wafer (x¿0.4) in an HF system is given. Selective etching at a cleaved facet and a calculation of the energy of activation are included.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; hydrogen compounds; p-n heterojunctions; semiconductor technology; AlxGa1-xAs/GaAs; HF; III-V semiconductors; cleaved facet; selective etching characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850394
