Title :
Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors
Author :
Bouadma, N. ; Riou, J. ; Kampfer, A.
Author_Institution :
Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Paris, France
Abstract :
We report the use of the ion-beam etching (IBE) technique to produce GaAs/GaAlAs BH lasers with one etched and one cleaved mirror facet. Low threshold currents of 12 mA have been measured in devices with 100 ¿m-long cavities.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical workshop techniques; semiconductor junction lasers; sputter etching; GaAs/GaAlAs BH lasers; III-V semiconductors; cavity resonators; cleaved mirror facet; ion-beam etching; ion-beam-etched mirrors; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850400
