• DocumentCode
    1009929
  • Title

    Low threshold GaAs/GaAlAs BH lasers with ion-beam-etched mirrors

  • Author

    Bouadma, N. ; Riou, J. ; Kampfer, A.

  • Author_Institution
    Centre National d´Etudes des Télécommunications, Laboratoire de Bagneux, Paris, France
  • Volume
    21
  • Issue
    13
  • fYear
    1985
  • Firstpage
    566
  • Lastpage
    568
  • Abstract
    We report the use of the ion-beam etching (IBE) technique to produce GaAs/GaAlAs BH lasers with one etched and one cleaved mirror facet. Low threshold currents of 12 mA have been measured in devices with 100 ¿m-long cavities.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical workshop techniques; semiconductor junction lasers; sputter etching; GaAs/GaAlAs BH lasers; III-V semiconductors; cavity resonators; cleaved mirror facet; ion-beam etching; ion-beam-etched mirrors; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850400
  • Filename
    4251331
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1009929