DocumentCode
1009940
Title
Two-dimensional E-field mapping with subpicosecond temporal resolution
Author
Meyer, K.E. ; Mourou, G.A.
Author_Institution
University of Rochester, Laboratory for Laser Energetics, Rochester, USA
Volume
21
Issue
13
fYear
1985
Firstpage
568
Lastpage
569
Abstract
A new contactless reflection-mode electro-optic sampling technique is described which is capable of characterising the electrical response of microstructures in two dimensions with micrometre spatial resolution, a temporal response of a fraction of a picosecond and millivolt sensitivity. A GaAs-based sampling technique which would have minimum interference with the test circuit is also proposed.
Keywords
VLSI; electric field measurement; field plotting; integrated circuit testing; large scale integration; GaAs-based sampling technique; LSI; VLSI testing; birefringence; contactless method; electric field distribution; electrical response; electro-optic sampling technique; micrometre spatial resolution; microstructure characterisation; millivolt sensitivity; reflection-mode; subpicosecond temporal resolution; two-dimensional E-field mapping; very-high-speed semiconductor devices;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850401
Filename
4251332
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