Title :
Fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback multiquantum-well lasers
Author :
Dutta, N.K. ; Wessel, T. ; Olsson, N.A. ; Logan, R.A. ; Yen, R. ; Anthony, P.J.
Author_Institution :
AT&T Bell Laboratories, Murray Hill, USA
Abstract :
The fabrication and performance characteristics of InGaAsP ridge-guide distributed-feedback lasers with multiquantum-well active layers are reported. The lasers are 320 ¿m long and have four active wells (¿300 Ã
thick). The lasers have threshold current ¿100 mA at 30°C, external differential quantum efficiency ¿0.1 mW/mA/facet at 30°C and To¿ 60 K and can be operated in the same DFB mode up to 70°C. The measured frequency chirp is about a factor of 3 smaller than that for conventional double-heterostructure lasers. The smaller chirp should allow larger repeater spacing for high-bit-rate long-distance fibre transmission systems applications.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; optical communication equipment; optical waveguides; semiconductor junction lasers; DFB mode; III-V semiconductors; InGaAsP; MQW; distributed-feedback; frequency chirp; high-bit-rate; larger repeater spacing; long-distance fibre transmission systems; multiquantum-well lasers; optical communication devices; optical fibres; ridge-guide; semiconductor lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850404