Title :
p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET
Author :
Matsumoto, Kaname ; Ogura, M. ; Wada, Tomotaka ; Yao, Tingfeng ; Hayashi, Yasuhiro ; Hashizume, Nobuya ; Kato, Masaaki ; Endo, T. ; Inage, H.
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
The first p-channel GaAs SIS (semiconductor-insulator-semiconductor) FET having a p+-GaAs/undoped GaAlAs/undoped GaAs structure is reported. The FET fabricated shows a transconductance of gm=30 mS/mm, a drain conductance of gd=2.5 mS/mm and a threshold voltage of Vth=+0.2 V at 77 K in the dark.
Keywords :
III-V semiconductors; gallium arsenide; insulated gate field effect transistors; GaAs; III-V semiconductors; SIS FET; p+-GaAs/undoped GaAlAs/undoped GaAs structure; p-channel; semiconductor-insulator-semiconductor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850410
