DocumentCode :
1010061
Title :
Use of transparent indium tin oxide to form a highly efficient 20 GHz Schottky barrier photodiode
Author :
Parker, D.G.
Author_Institution :
GEC Research Limited, Hirst Research Centre, Wembley, UK
Volume :
21
Issue :
18
fYear :
1985
Firstpage :
778
Abstract :
The letter discusses the development and characterisation of a GaAs Schottky barrier photodiode based on transparent conducting indium tin oxide (ITO). The use of ITO results in external quantum efficiencies of 60% at 830 nm. The devices have been measured to have a FWHM impulse response of ~20 ps and a ¿3 dBm bandwidth in excess of 20 GHz.
Keywords :
III-V semiconductors; Schottky-barrier diodes; photodiodes; -3 dBm bandwidth; FWHM impulse response; GaAs; III-V semiconductors; Schottky barrier photodiode; external quantum efficiencies; transparent In2-xSnxO3-y;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850548
Filename :
4251346
Link To Document :
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