Title :
Triple-stripe phase-locked diode lasers emitting 100 mw CW with single-lobed far-field patterns
Author :
Ohsawa, J. ; Hinata, S. ; Aoyagi, T. ; Kadowaki, T. ; Kaneno, N. ; Ikeda, K. ; Susaki, W.
Author_Institution :
Mitsubishi Electric Corporation, LSI Research & Development Laboratory, Itami, Japan
Abstract :
AlGaAs laser arrays with inner stripe configuration have been developed. Transverse mode control was accomplished by introducing nonuniform refractive index and gain distributions, which are built in utilising growth features of liquid-phase epitaxy. The maximum light outputs are 130 mW and 400 mW in CW and pulsed operation, respectively.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; AlGaAs laser arrays; CW; III-V semiconductors; inner stripe configuration; liquid-phase epitaxy; maximum light outputs; nonuniform refractive index; pulsed operation; single-lobed far-field patterns; triple-stripe phase-locked diode lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850549
