• DocumentCode
    1010149
  • Title

    Gigahertz band GaAs monolithic limiting amplifier

  • Author

    Akazawa, Y. ; Wakimoto, T. ; Kikuchi, H. ; Kawarada, K. ; Kato, N. ; Ohwada, K.

  • Author_Institution
    NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
  • Volume
    21
  • Issue
    18
  • fYear
    1985
  • Firstpage
    790
  • Lastpage
    791
  • Abstract
    The letter presents the design and performance of a gigahertz band limiting amplifier IC using GaAs MESFET IC technology. With a two-chip connection, an AM/PM conversion of 0.7°/dB over 43 dB input dynamic range at 1 GHz has been achieved.
  • Keywords
    III-V semiconductors; field effect integrated circuits; microwave amplifiers; microwave integrated circuits; AM/PM conversion; GaAs MESFET IC technology; GaAs monolithic limiting amplifier; III-V semiconductors; amplifier IC; dynamic range; gigahertz band; two-chip connection;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850557
  • Filename
    4251356
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010149