• DocumentCode
    1010249
  • Title

    Thermal donor and new donor generation in SOI material formed by oxygen implantation

  • Author

    Cristoloveanu, S. ; Pumfrey, J. ; Scheid, E. ; Hemment, P.L.F. ; Arrowsmith, R.P.

  • Author_Institution
    ENSERG, LPCS, UA-CNRS, Grenoble, France
  • Volume
    21
  • Issue
    18
  • fYear
    1985
  • Firstpage
    802
  • Lastpage
    804
  • Abstract
    The oxygen content of silicon-on-insulator films, formed by oxygen implantation, is shown to be responsible for the generation of high-density free carriers: thermal donors at 450°C and new donors at 750°C. The variation of sheet resistance and spreading resistance profiles is measured after successive isochronal and isothermal anneals. The initial generation rate of new donors greatly exceeds that of thermal donors, suggesting a surface-states-related mechanism.
  • Keywords
    carrier mobility; electrical conductivity measurement; ion implantation; semiconductor-insulator boundaries; O implantation; SOI material; Si-on-insulator; donor generation; high-density free carriers; isochronal anneals; isothermal anneals; sheet resistance; spreading resistance; surface-states-related mechanism; thermal donors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850566
  • Filename
    4251365
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010249