Title :
Thermal donor and new donor generation in SOI material formed by oxygen implantation
Author :
Cristoloveanu, S. ; Pumfrey, J. ; Scheid, E. ; Hemment, P.L.F. ; Arrowsmith, R.P.
Author_Institution :
ENSERG, LPCS, UA-CNRS, Grenoble, France
Abstract :
The oxygen content of silicon-on-insulator films, formed by oxygen implantation, is shown to be responsible for the generation of high-density free carriers: thermal donors at 450°C and new donors at 750°C. The variation of sheet resistance and spreading resistance profiles is measured after successive isochronal and isothermal anneals. The initial generation rate of new donors greatly exceeds that of thermal donors, suggesting a surface-states-related mechanism.
Keywords :
carrier mobility; electrical conductivity measurement; ion implantation; semiconductor-insulator boundaries; O implantation; SOI material; Si-on-insulator; donor generation; high-density free carriers; isochronal anneals; isothermal anneals; sheet resistance; spreading resistance; surface-states-related mechanism; thermal donors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850566
