• DocumentCode
    1010260
  • Title

    Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method

  • Author

    Imamura, Kousuke ; Ohnishi, Tadasuke ; Shigaki, M. ; Yokoyama, Naoki ; Nishi, Hidetaka

  • Author_Institution
    Fujitsu Laboratories Ltd., Atsugi, Japan
  • Volume
    21
  • Issue
    18
  • fYear
    1985
  • Firstpage
    804
  • Lastpage
    805
  • Abstract
    Au/TiN/WSi-gate self-aligned GaAs MESFETs were fabricated using the rapid thermal annealing method to reduce the gate resistance of the FETs. The gate resistance Rg was 4.2 ¿ (Lg=1.5 ¿m, Wg=400 ¿m), just 1/20 of that of the WSi-gate FET. The maximum frequency of oscillation fmax of the Au/TiN/WSi-gate FETs was improved to be about twice that of WSi-gate FETs.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; semiconductor technology; Au/TiN/WSi-gate; gate resistance; maximum oscillation frequency; rapid thermal annealing; self-aligned GaAs MESFETs;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850567
  • Filename
    4251366
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010260