Title :
Au/TiN/WSi-gate self-aligned GaAs MESFETs using rapid thermal annealing method
Author :
Imamura, Kousuke ; Ohnishi, Tadasuke ; Shigaki, M. ; Yokoyama, Naoki ; Nishi, Hidetaka
Author_Institution :
Fujitsu Laboratories Ltd., Atsugi, Japan
Abstract :
Au/TiN/WSi-gate self-aligned GaAs MESFETs were fabricated using the rapid thermal annealing method to reduce the gate resistance of the FETs. The gate resistance Rg was 4.2 ¿ (Lg=1.5 ¿m, Wg=400 ¿m), just 1/20 of that of the WSi-gate FET. The maximum frequency of oscillation fmax of the Au/TiN/WSi-gate FETs was improved to be about twice that of WSi-gate FETs.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; annealing; gallium arsenide; semiconductor technology; Au/TiN/WSi-gate; gate resistance; maximum oscillation frequency; rapid thermal annealing; self-aligned GaAs MESFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850567
