Title :
Voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors
Author :
Wang, K.C. ; Asbeck, P.M. ; Miller, D.L. ; Eisen, F.H.
Author_Institution :
Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA
Abstract :
The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. The offset voltage of these circuits was found to be generally below 4 mV, and hysteresis below 1 mV; both voltages stayed quite constant over a range of reference voltage of about 1 V. The preliminary circuit yield was high. This work demonstrated the suitability of these HBT comparators for use in a flash A/D convertor of high accuracy (up to 8 bits).
Keywords :
analogue-digital conversion; bipolar transistor circuits; comparators (circuits); 8 bit accuracy; GaAs/(GaAl)As heterojunction bipolar transistors; circuit yield; flash A/D convertor; hysteresis; offset voltage; voltage comparators;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850569
