DocumentCode
1010276
Title
Voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors
Author
Wang, K.C. ; Asbeck, P.M. ; Miller, D.L. ; Eisen, F.H.
Author_Institution
Rockwell International Corporation, Microelectronics Research & Development Center, Thousand Oaks, USA
Volume
21
Issue
18
fYear
1985
Firstpage
807
Lastpage
808
Abstract
The first voltage comparators implemented with GaAs/(GaAl)As heterojunction bipolar transistors (HBTs) are reported. The offset voltage of these circuits was found to be generally below 4 mV, and hysteresis below 1 mV; both voltages stayed quite constant over a range of reference voltage of about 1 V. The preliminary circuit yield was high. This work demonstrated the suitability of these HBT comparators for use in a flash A/D convertor of high accuracy (up to 8 bits).
Keywords
analogue-digital conversion; bipolar transistor circuits; comparators (circuits); 8 bit accuracy; GaAs/(GaAl)As heterojunction bipolar transistors; circuit yield; flash A/D convertor; hysteresis; offset voltage; voltage comparators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850569
Filename
4251368
Link To Document