DocumentCode :
1010277
Title :
"Techniques employed in the fabrication of p-n-p power alloy transistors"
Author :
Robillard, T.R.
Author_Institution :
Bell Telephone Laboratories Inc.
Volume :
3
Issue :
2
fYear :
1956
fDate :
4/1/1956 12:00:00 AM
Firstpage :
112
Lastpage :
112
Keywords :
Alloying; Aluminum; Electric shock; Electron tubes; Fabrication; Frequency; Glow discharges; Ionization; Laboratories; Photoconducting materials; Powders; Rectifiers; Silicon alloys; Stability; Temperature; Tungsten; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IRE Transactions on
Publisher :
ieee
ISSN :
0096-2430
Type :
jour
DOI :
10.1109/T-ED.1956.14143
Filename :
1472062
Link To Document :
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