Title :
InGaAs PIN photodetectors with modulation response to millimetre wavelengths
Author :
Bowers, John E. ; Burrus, C.A. ; McCoy, R.J.
Author_Institution :
AT&T Bell Laboratories, Holmdel, USA
Abstract :
The transit-time and parasitic limitations on the bandwidth of PIN photodetectors are described and compared with experimental results. Packaged InGaAs photodetectors with measured 3 dB response to 36 GHz (8.3 mm wavelength) have been made.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microwave detectors; photodetectors; 3 dB response; 36 GHz; InGaAs PIN photodetectors; bandwidth; millimetre wavelengths; modulation response; parasitic limitations; transit-time;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850573
