DocumentCode
1010384
Title
Erratum: New u(E) relationship for GaAs
Author
Feng, Y.-K.
Volume
21
Issue
18
fYear
1985
Firstpage
824
Keywords
III-V semiconductors; carrier mobility; gallium arsenide; high field effects; GaAs; average peak electron velocity; lattice temperature; nonequilibrium transport effects; peak electric field; saturation electron velocity; velocity overshoot effects;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850581
Filename
4251381
Link To Document