Title :
"An improved point-contact transistor structure"
Author_Institution :
Bell Telephone Laboratories
fDate :
4/1/1956 12:00:00 AM
Keywords :
Attenuators; Capacitance; Circuits; Conductivity; Delay; Dielectric materials; Fabrication; Frequency; Geometry; Germanium alloys; Glass; Laboratories; Noise figure; Optical amplifiers; Optical attenuators; Production; Semiconductor diodes; Testing; Voltage control;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1956.14156
