DocumentCode
1010411
Title
"An improved point-contact transistor structure"
Author
Burcham, N.P.
Author_Institution
Bell Telephone Laboratories
Volume
3
Issue
2
fYear
1956
fDate
4/1/1956 12:00:00 AM
Firstpage
114
Lastpage
114
Keywords
Attenuators; Capacitance; Circuits; Conductivity; Delay; Dielectric materials; Fabrication; Frequency; Geometry; Germanium alloys; Glass; Laboratories; Noise figure; Optical amplifiers; Optical attenuators; Production; Semiconductor diodes; Testing; Voltage control;
fLanguage
English
Journal_Title
Electron Devices, IRE Transactions on
Publisher
ieee
ISSN
0096-2430
Type
jour
DOI
10.1109/T-ED.1956.14156
Filename
1472075
Link To Document