Title :
GaInAs PIN photodiodes grown by atmospheric-pressure MOVPE
Author :
Nelson, A.W. ; Wong, Simon ; Ritchie, S. ; Sargood, S.K.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
GaInAs/InP PIN photodiodes with low dark currents and capacitances have been successfully fabricated from material grown by atmospheric-pressure MOVPE. Both Zn-diffused and grown-in p+-n homojunction material have provided yields of over 70% for devices with leakage currents less than 20 nA. This growth technique, therefore, looks particularly appropriate for a reproducible, high-yield and inexpensive method of photodetector production.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photodetectors; photodiodes; semiconductor growth; vapour phase epitaxial growth; GaInAs/InP PIN photodiodes; atmospheric-pressure MOVPE; growth technique; leakage currents; low capacitance; low dark currents; p+- n homojunction; photodetector; yields;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850591
