Effective screen for fast aging InGaAsP BH lasers using electrical derivatives

We report here the first use of electrical derivatives to predict threshold current degradation rates for InGaAsP, etched mesa BH lasers. Fast aging lasers are found to display a post-threshold I dV/dI temperature dependence which sets them apart from slow agers. This signature is explained in terms of a nonlinear current leakage path in the confinement layers. We propose the use of the I dV/dI temperature signature as a screen to eliminate fast aging lasers in high-reliability applications.