A developmental intrinsic-barrier transistor

The intrinsic-barrier design extends transistor frequency range without sacrificing power-handling capacity. A Germanium p-n-i-p transistor has been developed to serve as an oscillator in the neighborhood of 200 mc and to yield approximately 20 mw of useful output at the oscillation frequency. The structure of this developmental unit is described, and some performance and parameter distribution data are given for a group of 53 transistors which were selected on the basis of α0> 0.7 and estimated common-base fα> 80 mc. The most efficient unit tested as an oscillator delivered 37 mw at 225 mc with an input power of 150 mw.