• DocumentCode
    1010803
  • Title

    Planar monolithic integration of a Schottky photodiode and a GaAs field-effect transistor for 0.8 μm-wavelength applications

  • Author

    Verriele, H. ; Maricot, S. ; Constant, M. ; Ramdani, J. ; Decoster, D.

  • Author_Institution
    Université des Sciences et Techniques de Lille, Centre Hyperfréquences et Semiconducteurs, LA CNRS 287, Villeneuve d´Ascq, France
  • Volume
    21
  • Issue
    19
  • fYear
    1985
  • Firstpage
    878
  • Lastpage
    879
  • Abstract
    A planar monolithic integrated photoreceiver suitable for 0.8 μm-wavelength optical communication systems has been realised. It consists of a GaAs Schottky photodiode associated with a GaAs FET. Sensitivities, response times and noise properties of the integrated circuit have been measured and are explained, taking into account various effects such as doping level, thickness of the depletion region and capacitance of the diode.
  • Keywords
    field effect transistors; integrated optoelectronics; monolithic integrated circuits; optical communication equipment; photodiodes; GaAs field-effect transistor; Schottky photodiode; capacitance; depletion region; doping level; noise properties; optical communication systems; planar monolithic integrated photoreceiver; response times;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850620
  • Filename
    4251422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010803