DocumentCode :
1010864
Title :
High-power, low-threshold BH lasers operating at 1.52 μm grown entirely by MOVPE
Author :
Nelson, A.W. ; Devlin, W.J. ; Hobbs, R.E. ; Lenton, C.G.D. ; Wong, S.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Volume :
21
Issue :
20
fYear :
1985
Firstpage :
888
Lastpage :
889
Abstract :
BH laser devices with efficient optical and current confinement have been grown using a new all-MOVPE growth technique. The devices produced operated with CW threshold currents as low as 14 mA and output powers of up to 28 mW at 20μC. In initial experiments, over 70% of the working devices tested had threshold currents of less than 30 mA, substantiating the view that MOVPE is a highly promising technique for the large-scale production of complex optoelectronic devices.
Keywords :
optical fibres; optical links; semiconductor junction lasers; vapour phase epitaxial growth; CW threshold currents; all-MOVPE growth technique; buried heterostructure; complex optoelectronic devices; current confinement; large-scale production; low-threshold BH lasers; output powers; wavelength 1.52 micron;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19850626
Filename :
4251429
Link To Document :
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