• DocumentCode
    1010906
  • Title

    The effects of nonuniform oxide thickness on MOSFET performance

  • Author

    Zhang, Q.Z. ; Kozicki, M.N. ; Schroder, D.K.

  • Author_Institution
    Arizona State Univ., Tempe, AZ, USA
  • Volume
    35
  • Issue
    8
  • fYear
    1988
  • fDate
    8/1/1988 12:00:00 AM
  • Firstpage
    1395
  • Lastpage
    1397
  • Abstract
    Device characteristics, calculated using a novel MOSFET model with nonuniform gate thickness, are presented. The results show that nonuniform structures have some advantages over traditional uniform MOSFETs. Tapered-gate MOSFETs have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFETs
  • Keywords
    insulated gate field effect transistors; semiconductor device models; MOSFET performance; electric field; model; nonuniform oxide thickness; nonuniform structures; output differential saturation resistance; tapered gate structure; Electric resistance; Etching; Hafnium; MOSFET circuits; Optical device fabrication; Optical saturation; Performance analysis; Resists; Silicon compounds; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.2569
  • Filename
    2569
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010906