Title :
The effects of nonuniform oxide thickness on MOSFET performance
Author :
Zhang, Q.Z. ; Kozicki, M.N. ; Schroder, D.K.
Author_Institution :
Arizona State Univ., Tempe, AZ, USA
fDate :
8/1/1988 12:00:00 AM
Abstract :
Device characteristics, calculated using a novel MOSFET model with nonuniform gate thickness, are presented. The results show that nonuniform structures have some advantages over traditional uniform MOSFETs. Tapered-gate MOSFETs have higher output differential saturation resistance and lower electric field near the drain end than uniform MOSFETs
Keywords :
insulated gate field effect transistors; semiconductor device models; MOSFET performance; electric field; model; nonuniform oxide thickness; nonuniform structures; output differential saturation resistance; tapered gate structure; Electric resistance; Etching; Hafnium; MOSFET circuits; Optical device fabrication; Optical saturation; Performance analysis; Resists; Silicon compounds; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
