Title :
Complementary self-aligned laser by metalorganic chemical vapour deposition
Author :
Mawst, L.J. ; Costrini, G. ; Zmudzinski, C.A. ; Givens, M.E. ; Emanuel, M.A. ; Coleman, J.J.
Author_Institution :
University of Illinois, Electrical Engineering Research Laboratory, Urbana, USA
Abstract :
A complementary two-step MOCVD growth technique for the self-aligned laser is described which eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the regrowth interface outside the stripe region. Single-longitudinal-mode operation with stable near and far-field patterns has been obtained to more than twice the laser threshold current.
Keywords :
III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; III-V semiconductors; complementary two-step MOCVD growth technique; far-field patterns; high composition AlGaAs layer; laser threshold current; metalorganic chemical vapour deposition; near-field patterns; regrowth interface outside stripe region; self-aligned laser; single longitudinal mode; stability;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850637
