• DocumentCode
    1010967
  • Title

    Complementary self-aligned laser by metalorganic chemical vapour deposition

  • Author

    Mawst, L.J. ; Costrini, G. ; Zmudzinski, C.A. ; Givens, M.E. ; Emanuel, M.A. ; Coleman, J.J.

  • Author_Institution
    University of Illinois, Electrical Engineering Research Laboratory, Urbana, USA
  • Volume
    21
  • Issue
    20
  • fYear
    1985
  • Firstpage
    903
  • Lastpage
    905
  • Abstract
    A complementary two-step MOCVD growth technique for the self-aligned laser is described which eliminates any possible difficulty associated with regrowth on a high composition AlGaAs layer by placing the regrowth interface outside the stripe region. Single-longitudinal-mode operation with stable near and far-field patterns has been obtained to more than twice the laser threshold current.
  • Keywords
    III-V semiconductors; aluminium compounds; chemical vapour deposition; gallium arsenide; semiconductor junction lasers; III-V semiconductors; complementary two-step MOCVD growth technique; far-field patterns; high composition AlGaAs layer; laser threshold current; metalorganic chemical vapour deposition; near-field patterns; regrowth interface outside stripe region; self-aligned laser; single longitudinal mode; stability;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850637
  • Filename
    4251441
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1010967