• DocumentCode
    1011165
  • Title

    Optimised HEMT structure with an Al0.45 Ga0.55As spacer and an Al0.20Ga0.80As doped region

  • Author

    Huang, J.C. ; Wicks, G.W. ; Calawa, A.R. ; Eastman, L.F.

  • Author_Institution
    Cornell University, Department of Applied Physics, Ithaca, USA
  • Volume
    21
  • Issue
    20
  • fYear
    1985
  • Firstpage
    925
  • Lastpage
    926
  • Abstract
    We have obtained an optimised HEMT structure with a high 2DEG sheet concentration of 1×1012 cm¿2 while maintaining a high 77 K electron Hall mobility of 120,000 cm2/Vs. The structure utilises a 45% Al mole fraction AlGaAs barrier and a 20% Al mole fraction doped region. It has little or no light sensitivity at 77 K.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; 77K; Al0.20Ga0.80As doped region; Al0.45Ga0.55As spacer; HEMT; III-V semiconductors; MODFET; electron Hall mobility; high electron mobility transistor; modulation doping; optimised structure; two-dimensional electron gas;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850654
  • Filename
    4251458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011165