DocumentCode
1011197
Title
New method to measure facet reflectivity of antireflection (AR)-coated laser diodes and LEDs
Author
Wang, Jiacheng
Author_Institution
Technical University of Denmark, Electromagnetics Institute, Lyngby, Denmark
Volume
21
Issue
20
fYear
1985
Firstpage
929
Lastpage
931
Abstract
The facet reflectivity of AR-coated laser diodes and LEDs can be obtained by measuring the reflected optical power from the Fabry-Perot cavity formed by the flat end of a single-mode fibre and the diode facet. The relative error is estimated to be less than 10%. The estimation was based on the measurements on a conventional and an AR-coated 1.3 ¿m InGaAsP BH laser diode and the theoretical consideration of the light beam divergence and the angle misalignment of the cavity.
Keywords
III-V semiconductors; antireflection coatings; gallium arsenide; indium compounds; laser cavity resonators; light emitting diodes; optical variables measurement; reflectometry; semiconductor junction lasers; 1.3 microns wavelength; BH diode; Fabry-Perot cavity; InGaAsP; LEDs; angle misalignment; antireflection coated devices; buried heterostructure; facet reflectivity; laser diodes; light beam divergence; reflected optical power measurement; semiconductor lasers; single-mode fibre;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850657
Filename
4251461
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