Title :
Room-temperature CW operation of AlGaInP double-heterostructure visible lasers
Author :
Kobayashi, Kaoru ; Kawata, Shigeo ; Gomyo, A. ; Hino, I. ; Suzuki, Takumi
Author_Institution :
NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Room-temperature continuous-wave (CW) operation of (Al0.4Ga0.6)0.5In0.5P/Ga0.5In0.5P/(Al0.4Ga0.6)0.5In0.5P double-heterostructure visible semiconductor lasers has been achieved for the first time. CW operation is obtained up to 50° C. The threshold current at 25° C is mA (4.1 kA/cm2). The lasing wavelength is 689.7 nm.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; (Al0.4Ga0.6)0.5In0.5 P/Ga0.5In0.5P/(Al0.6Ga0.6 )0.5In0.5P; 25°C; 35 mA threshold current; 50°C; 689.7 nm lasing wavelength, DH type; AlGaInP; CW operation; III-V semiconductors; continuous-wave; double-heterostructure; low-pressure MOCVD; room temperature operation; semiconductor lasers; visible lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850658
