• DocumentCode
    1011208
  • Title

    Room-temperature CW operation of AlGaInP double-heterostructure visible lasers

  • Author

    Kobayashi, Kaoru ; Kawata, Shigeo ; Gomyo, A. ; Hino, I. ; Suzuki, Takumi

  • Author_Institution
    NEC Corporation, Opto-Electronics Research Laboratories, Kawasaki, Japan
  • Volume
    21
  • Issue
    20
  • fYear
    1985
  • Firstpage
    931
  • Lastpage
    932
  • Abstract
    Room-temperature continuous-wave (CW) operation of (Al0.4Ga0.6)0.5In0.5P/Ga0.5In0.5P/(Al0.4Ga0.6)0.5In0.5P double-heterostructure visible semiconductor lasers has been achieved for the first time. CW operation is obtained up to 50° C. The threshold current at 25° C is mA (4.1 kA/cm2). The lasing wavelength is 689.7 nm.
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; semiconductor junction lasers; (Al0.4Ga0.6)0.5In0.5 P/Ga0.5In0.5P/(Al0.6Ga0.6 )0.5In0.5P; 25°C; 35 mA threshold current; 50°C; 689.7 nm lasing wavelength, DH type; AlGaInP; CW operation; III-V semiconductors; continuous-wave; double-heterostructure; low-pressure MOCVD; room temperature operation; semiconductor lasers; visible lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850658
  • Filename
    4251462
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011208