• DocumentCode
    1011283
  • Title

    Fast CMOS ECL receivers with 100-mV worst-case sensitivity

  • Author

    Chappell, Barbara A. ; Chappell, Terry I. ; Schuster, Stanely E. ; Segmuller, Hermann M. ; Allan, James W. ; Franch, Robert L. ; Restle, Phillip J.

  • Author_Institution
    IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
  • Volume
    23
  • Issue
    1
  • fYear
    1988
  • Firstpage
    59
  • Lastpage
    67
  • Abstract
    CMOS emitter-coupled logic (ECL) receiver circuits consisting of a differential-amplifier stage and a CMOS inverter are shown to convert 100-mV input signals to on-chip CMOS levels even with worst-case parameter variations in a 5-V 1- mu m technology. Two different receiver circuits are used to cover a range of power supply options; a third circuit provides a comparison case. The differential amplifiers feature built-in feedback compensation for common-mode parameter variations. The differential input devices are designed with large widths, minimum channel lengths, and an interleaved layout to enhance gain, speed, and margin for differential mismatches. The simplicity of the circuits and the effectiveness of the built-in compensation facilitate analysis. Partitioning and simplifying assumptions are used to thoroughly test the worst case without complex simulations, while providing insight into the design process.<>
  • Keywords
    CMOS integrated circuits; compensation; differential amplifiers; emitter-coupled logic; feedback; integrated logic circuits; integrated memory circuits; receivers; 1 micron; 100 mV; 100-mV worst-case sensitivity; 5 V; 5 V one micron technology; CMOS ECL receivers; CMOS inverter; SRAM; common-mode parameter variations; differential-amplifier stage; emitter-coupled logic; feedback compensation; interleaved layout; logic interfacing; onchip CMOS levels; small-signal interfaces; CMOS logic circuits; CMOS technology; Circuit simulation; Circuit testing; Delay; Differential amplifiers; Feedback; Inverters; Power supplies; Random access memory;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.257
  • Filename
    257