Title :
Characteristics and structure of a diffused-base germanium oscillator transitor
Author :
Warner, R.M. ; Loman, G.T. ; Early, J.M.
Author_Institution :
Motorola Semiconductor Products, Inc., Phoenix, AZ, USA
fDate :
4/1/1957 12:00:00 AM
Keywords :
Alloying; Aluminum; Birefringence; Capacitance; Diodes; Germanium; Impurities; Laboratories; Optical polarization; Oscillators; Silicon; Telephony; Voltage;
Journal_Title :
Electron Devices, IRE Transactions on
DOI :
10.1109/T-ED.1957.14245
