DocumentCode
1011341
Title
10-30 GHz monolithic GaAs travelling-wave divider/combiner
Author
Tserng, Hua-Quen ; Saunier, Paul
Author_Institution
Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
Volume
21
Issue
21
fYear
1985
Firstpage
950
Lastpage
951
Abstract
A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.
Keywords
III-V semiconductors; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; waveguide components; bandwidth 10 to 30 GHz; design centre frequency 20 GHz; input VSWR; insertion loss; microwave performance; monolithic GaAs power FET amplifiers; monolithic GaAs travelling-wave divider/combiner; output VSWR; power combiner; power divider;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850671
Filename
4251479
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