• DocumentCode
    1011341
  • Title

    10-30 GHz monolithic GaAs travelling-wave divider/combiner

  • Author

    Tserng, Hua-Quen ; Saunier, Paul

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    950
  • Lastpage
    951
  • Abstract
    A four-way monolithic GaAs travelling-wave power divider/combiner has been designed, fabricated and evaluated. With a design centre frequency of 20 GHz, a bandwidth of from 10 GHz to 30 GHz has been measured. The insertion loss per dividing or combining action is less than 0.5 dB, with isolation between ports no worse than 20 dB. The input/output VSWRs are better than 2:1 across the same band. This divider/combiner can readily be used with monolithic GaAs power FET amplifiers to produce a several-fold increase in output powers over the 10 to 30 GHz frequency range.
  • Keywords
    III-V semiconductors; gallium arsenide; microwave integrated circuits; monolithic integrated circuits; waveguide components; bandwidth 10 to 30 GHz; design centre frequency 20 GHz; input VSWR; insertion loss; microwave performance; monolithic GaAs power FET amplifiers; monolithic GaAs travelling-wave divider/combiner; output VSWR; power combiner; power divider;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850671
  • Filename
    4251479