DocumentCode
1011358
Title
High-speed long-wavelength optical modulation in InGaAs/InAlAs multiple quantum wells
Author
Wakita, Ken ; Kawamura, Yuriko ; Yoshikuni, Y. ; Asahi, H. ; Uehara, Satoshi
Author_Institution
NTT Atsugi Electrical Communication Laboratories, Atsugi, Japan
Volume
21
Issue
21
fYear
1985
Firstpage
951
Lastpage
953
Abstract
A long-wavelength optical modulator has been fabricated which makes use of an electroabsorption effect in multiple quantum wells (MQWs). Here, InGaAs/InAlAs MQWs are prepared in a PIN configuration using molecular beam epitaxy (MBE). The rise time of the detected pulse modulation signal has been measured at 190 ps. This response level has been attributed to the detecting system response and RC time constant, and not to such intrinsic effects as carrier lifetime.
Keywords
III-V semiconductors; aluminium compounds; electro-optical devices; electroabsorption; gallium arsenide; indium compounds; optical modulation; semiconductor superlattices; III-V semiconductor; InGaAs/InAlAs multiple quantum wells; PIN configuration; R C time constant; detecting system response; electroabsorption effect; long-wavelength optical modulation; molecular beam epitaxy; pulse modulation signal; response level; rise time;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850672
Filename
4251481
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