• DocumentCode
    1011378
  • Title

    Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components

  • Author

    Soref, R.A. ; Lorenzo, J.P.

  • Author_Institution
    US Air Force, Rome Air Development Center, Solid State Sciences Division, Bedford, USA
  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    953
  • Lastpage
    954
  • Abstract
    The first all-silicon integrated-optical components for 1.3/1.6 μm have been demonstrated. An optical power divider with end-fire coupling was constructed from intersecting channel waveguides. Guides were fabricated by plasma-etching of an intrinsic Si layer grown epitaxially on a heavily doped Si substrate (n on n+ or p on p+). Active components are proposed.
  • Keywords
    elemental semiconductors; integrated optics; optical waveguide components; semiconductor epitaxial layers; silicon; active components; end-fire coupling; epitaxial layers; heavily doped Si substrate; integrated-optical components; intersecting channel waveguides; intrinsic Si layer; optical power divider; plasma-etching; semiconductor; single crystal Si; wavelength 1.3 microns; wavelengths 1.6 microns;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850673
  • Filename
    4251482