• DocumentCode
    1011399
  • Title

    Fabrication of n+ ledge channel structure for GaAs FETs with a single lithography step

  • Author

    Macksey, H.M. ; Hudgens, R.D.

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, Dallas, USA
  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    955
  • Lastpage
    957
  • Abstract
    A self-aligned process has been developed using multiple resist layers to fabricate the n+ ledge channel structure on GaAs FETs with a single lithography step. The new process eliminates one critical alignment step and has greater flexibility for the control of channel parameters. Power FET performance is comparable to that of conventionally produced devices.
  • Keywords
    III-V semiconductors; electron beam lithography; field effect transistors; gallium arsenide; power transistors; solid-state microwave devices; GaAs FETs; electron beam lithography; microwave performance; multiple resist layers; n+ ledge channel structure; power FET; self-aligned process; single lithography step;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850675
  • Filename
    4251484
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011399