DocumentCode
1011412
Title
Six micrometer period wide-gap permalloy magnetic bubble devices
Author
Chirovsky, L.M.F. ; Bobeck, A.H. ; Bonyhard, P.I. ; Ekholm, D.T. ; Hou, T.W. ; Smith, J.L.
Author_Institution
AT&T Bell Laboratories, Murray Hill, New Jersey
Volume
21
Issue
5
fYear
1985
fDate
9/1/1985 12:00:00 AM
Firstpage
1675
Lastpage
1680
Abstract
This report describes the progress made toward the goal of developing a 1 Mbit bubble memory chip, based on a 6 μm period wide-gap permalloy technology. Characterization of the functions showed that the guard-rail, generator, swap, write-line, read-line and after several revisions, the replicator and the expander-detector performed acceptably in preliminary testing. Full longevity qualification was not conducted. A data-every-cycle capability was also designed into the chip. A major problem that remained was a poor yield of operating minor loops. Several investigations were initiated to solve the problem of low minor loop yield. A dual-spacing process, which allows the minor loop propagation elements to be more tightly coupled to the garnet film was developed. Several new propagate structures, intended to be more tolerant of small defects (either in the epi-film or in the patterning of the circuit), were also conceived.
Keywords
Magnetic bubble memories; Permalloy memories; Character generation; Coupling circuits; Garnet films; Magnetic devices; Manufacturing processes; Packaging; Performance evaluation; Qualifications; Testing; Vehicles;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1985.1063916
Filename
1063916
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