Title :
Via holes for GaAs MMICs fabricated using reactive ion etching
Author :
Hilton, K.P. ; Woodward, J.
Author_Institution :
Royal Signals & Radar Establishment, Malvern, UK
Abstract :
A dry etching process has been employed in the successful fabrication of through-substrate via holes for GaAs MMICs. The etching was carried out using Freon 12 (CCl2F2) as the etching gas. These vias have been shown to have low loss up to 12GHz.
Keywords :
III-V semiconductors; gallium arsenide; integrated circuit technology; microwave integrated circuits; monolithic integrated circuits; sputter etching; Freon 12; GaAs MMICs; dichlorodifluoromethane; dry etching; etching gas; reactive ion etching; via holes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19850679
