• DocumentCode
    1011446
  • Title

    Via holes for GaAs MMICs fabricated using reactive ion etching

  • Author

    Hilton, K.P. ; Woodward, J.

  • Author_Institution
    Royal Signals & Radar Establishment, Malvern, UK
  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    962
  • Lastpage
    963
  • Abstract
    A dry etching process has been employed in the successful fabrication of through-substrate via holes for GaAs MMICs. The etching was carried out using Freon 12 (CCl2F2) as the etching gas. These vias have been shown to have low loss up to 12GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; integrated circuit technology; microwave integrated circuits; monolithic integrated circuits; sputter etching; Freon 12; GaAs MMICs; dichlorodifluoromethane; dry etching; etching gas; reactive ion etching; via holes;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850679
  • Filename
    4251488
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011446