Improved hot-carrier resistance with fluorinated gate oxides

Author

MacWilliam, Kenneth ; Halle, L.F. ; Zietlow, T.C.

Author_Institution

Aerosp. Corp., Los Angeles, CA, USA

Volume

11

Issue

1

fYear

1990

Firstpage

3

Lastpage

5

Abstract

Improved OFF-state hot-carrier resistance in n-channel MOSFETs observed for fluorinated gate oxides is discussed. One-micrometer fluorinated devices consistently showed approximately three times smaller transconductance reduction and threshold-voltage shift relative to the control (nonfluorinated) MOSFETs. The fluorine was incorporated into the gate oxide by low-energy ion implantation followed by a 920 degrees C diffusion. Subthreshold measurements taken before and after hot-electron stress explicitly show the reduction in interface state generation with fluorine incorporation.<>

Keywords

hot carriers; insulated gate field effect transistors; interface electron states; ion implantation; 1 micron; 920 degC; OFF-state hot-carrier resistance; Si-SiO/sub 2/; SiO/sub 2/:F; control MOSFET; fluorinated gate oxides; fluorine diffusion; fluorine incorporation; hot-electron stress; interface state generation; low-energy ion implantation; n-channel MOSFETs; subthreshold measurements; threshold-voltage shift; transconductance reduction; Annealing; Electrons; Hot carrier effects; Hot carriers; Hydrogen; Implants; Interface states; MOSFET circuits; Stress; Testing;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46912

Filename

46912