26-percent efficient point-junction concentrator solar cells with a front metal grid

Author

Cuevas, Andres ; Sinton, Ronald A. ; Midkiff, Neil E. ; Swanson, Richard M.

Author_Institution

Dept. of Electr. Eng., Stanford Univ., CA, USA

Volume

11

Issue

1

fYear

1990

Firstpage

6

Lastpage

8

Abstract

Silicon concentrator cells with point diffusion and metal contacts on both the front and backsides are discussed. The design minimizes reflection losses by forming an inverted pyramid topography on the front surface and by shaping the metal grid lines in the form of a triangular ridge. A short-circuit current density of 39.6 mA/cm/sup 2/ has been achieved, even though the front grid covers 16% of the cell´s active area of 1.56 cm/sup 2/. This, together with an open-circuit voltage of 700 mV, has led to an efficiency of 22% at one sun, AM1.5 global spectrum. Under direct-spectrum 8.8-W/cm/sup 2/ concentrated light, the efficiency is 26%. This is the highest ever reported for a silicon cell having a front metal grid.<>

Keywords

elemental semiconductors; semiconductor-metal boundaries; short-circuit currents; silicon; solar cells; 22 percent; 26 percent; 700 mV; AM1.5 global spectrum; Si concentrator cells; active cell area; concentrated light; direct-spectrum; front metal grid; grid covers; inverted pyramid topography; metal contacts; metal grid line shaping; one sun; open-circuit voltage; point diffusion; point-junction concentrator solar cells; reflection losses; short-circuit current density; triangular ridge; Current density; Etching; Optical losses; Optical reflection; Photovoltaic cells; Silicon; Sun; Surface topography; Voltage;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.46913

Filename

46913