DocumentCode
1011560
Title
Logic performance of Si3N4-n GaAs quasinormally off MISFETs
Author
Harrison, Andrew J. ; Swanson, J.G.
Author_Institution
King´s College (KQC), Department of Electronics, London, UK
Volume
21
Issue
21
fYear
1985
Firstpage
976
Lastpage
978
Abstract
n-GaAs MISFETs can be operated in a quasinormally off mode using charge stored in interface states to shift the threshold voltage. The transition from static to dynamic operation can be shown to explain the logic levels achievable. Ring oscillator results predict very promising gate delays and speed-power products.
Keywords
III-V semiconductors; field effect integrated circuits; gallium arsenide; insulated gate field effect transistors; integrated logic circuits; silicon compounds; III-V semiconductors; MISFETs; Si3N4 insulator; dynamic operation; monolithic logic IC; n-type GaAs; quasinormally off mode; ring oscillator implementation; static operation; threshold voltage shifting;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19850691
Filename
4251508
Link To Document