• DocumentCode
    1011566
  • Title

    Proposal and analysis of resonant tunnelling diode with single peaked I-V characteristics

  • Author

    Arai, K. ; Yamamoto, M.

  • Author_Institution
    NTT LSI Labs., Kanagawa, Japan
  • Volume
    31
  • Issue
    18
  • fYear
    1995
  • fDate
    8/31/1995 12:00:00 AM
  • Firstpage
    1615
  • Lastpage
    1616
  • Abstract
    A novel resonant tunnelling diode with single peaked I-V characteristics is proposed. In this diode, the resonant tunnelling effect in a vertical double barrier structure is coupled with the pinch-off effect in a lateral collector just beneath the structure. Using a one-dimensional distributed parameter model, the dependence of the I-V characteristics on the device parameters (emitter width and collector thickness) is investigated systematically
  • Keywords
    resonant tunnelling diodes; semiconductor device models; lateral collector; one-dimensional distributed parameter model; pinch-off; resonant tunnelling diode; single peaked I-V characteristics; vertical double barrier structure;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951051
  • Filename
    469134
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011566