• DocumentCode
    1011583
  • Title

    Direct bonding between InP and rare earth iron garnet grown on Gd 3Ga5O12 substrate by liquid phase epitaxy

  • Author

    Yokoi, Hiroshi ; Mizumoto, Tetsuya ; Maru, K. ; Naito, Yuta

  • Author_Institution
    Dept. of Phys. Electron., Tokyo Inst. of Technol.
  • Volume
    31
  • Issue
    18
  • fYear
    1995
  • fDate
    8/31/1995 12:00:00 AM
  • Firstpage
    1612
  • Lastpage
    1613
  • Abstract
    The bonding of InP and rare earth iron garnet grown on Gd3 Ga5O12 substrate without any additional material demonstrated. After chemical treatment, heat treatment in H2 ambient results in the bonding of the samples. This process is applicable to the integration of semiconductor and magneto-optic devices
  • Keywords
    III-V semiconductors; garnets; heat treatment; indium compounds; liquid phase epitaxial growth; magnetic epitaxial layers; rare earth compounds; wafer bonding; Gd3Ga5O12; Gd3Ga5O12 substrate; H2; InP; InP-JkFe5O12; chemical treatment; direct bonding; heat treatment; integration; liquid phase epitaxy; magneto-optic devices; rare earth iron garnet; semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19951050
  • Filename
    469136
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011583