DocumentCode :
1011639
Title :
Effect of hydrogen loading on temperature/electric-field poling of SiO2-based thin films on Si
Author :
Myers, R.A. ; Long, X.-C. ; Brueck, Steven R. J. ; Tumminelli, R.P.
Author_Institution :
Center for High Technol. Mater., New Mexico Univ., Albuquerque, NM
Volume :
31
Issue :
18
fYear :
1995
fDate :
8/31/1995 12:00:00 AM
Firstpage :
1604
Lastpage :
1606
Abstract :
Waveguide stacks of GeSiO2-based glass deposited on Si exhibit a permanent second-order nonlinearity following temperature electric-field poling. High temperature hydrogen loading increases the second harmonic signal under certain conditions
Keywords :
electro-optical effects; optical films; optical harmonic generation; optical waveguides; silicon compounds; GeSiO2-based glass; GeSiO2:H; Si; SiO2-based thin films; hydrogen loading; second-order nonlinearity; temperature/electric-field poling; waveguide stacks;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19951091
Filename :
469141
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1011639
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