• DocumentCode
    1011641
  • Title

    PnP-type InP/InGaAsP/InP bipolar transistor

  • Author

    Su, L.M. ; Schroeter-Janssen, H. ; Li, K.C. ; Grote, N.

  • Author_Institution
    Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, Berlin, West Germany
  • Volume
    21
  • Issue
    21
  • fYear
    1985
  • Firstpage
    989
  • Lastpage
    990
  • Abstract
    A PnP double-heterostructure InGaAsP/InP bipolar transistor was fabricated which is capable of bilateral operation. Forward and reverse current gains of about 15 and 5, respectively, were achieved. In the emitter-up configuration, an offset voltage of 1 V, believed to be due to the valence band discontinuity at the base/collector heterojunction, occurs in the Ic/VCE characteristics.
  • Keywords
    III-V semiconductors; bipolar transistors; gallium arsenide; indium compounds; 1 V offset voltage; III-V semiconductors; InGaAsP/InP; PNP type; bilateral operation; bipolar transistor; double-heterostructure; emitter-up configuration; p-n-p type;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19850699
  • Filename
    4251520
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1011641